IndiumV3, Main, Repository, bibRecord, 000535

Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass

Identifieur interne : 000535 ( Main/Repository ); précédent : 000534; suivant : 000536

Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass

Auteurs : RBID : Pascal:13-0044801

Descripteurs français

Pascal (Inist)
- Cellule solaire silicium, Evaluation performance, Texture, Semiconducteur type p, Méthode VLS, Couche ITO, Addition étain, Tension circuit ouvert, Courant court circuit, Cellule solaire, Piégeage optique, Nanofil, Verre, Matériau cristallin, Oxyde de zinc, Revêtement, Semiconducteur type n, Oxyde d'indium, Silicium, a-Si:H, ZnO, ITO.
Wicri :
- concept : Verre.

English descriptors

KwdEn :
- Coatings, Crystalline material, Glass, ITO layers, Indium oxide, Nanowires, Open circuit voltage, Optical trapping, Performance evaluation, Short circuit currents, Silicon, Silicon solar cells, Solar cell, Texture, Tin addition, VLS growth, Zinc oxide, n type semiconductor, p type semiconductor.

Abstract

We present a single pump-down process to texture hydrogenated amorphous silicon solar cells. Mats of p-type crystalline silicon nanowires were grown to lengths of 1 μm on glass covered with flat ZnO using a plasma-assisted Sn-catalyzed vapor-liquid-solid process. The nanowires were covered with conformal layers of intrinsic and n-type hydrogenated amorphous silicon and a sputtered layer of indium tin oxide. Each cell connects in excess of 10⁷ radial junctions over areas of 0.126 cm². Devices reach open-circuit voltages of 0.8 V and short-circuit current densities of 12.4 mA cm^-2, matching those of hydrogenated amorphous silicon cells deposited on textured substrates.

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Pascal:13-0044801

Le document en format XML

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<author><name sortKey="Cho, Jinyoun" uniqKey="Cho J">Jinyoun Cho</name>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Palaiseau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="O Donnell, Benedict" uniqKey="O Donnell B">Benedict O Donnell</name>
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<s2>91128 Palaiseau</s2>
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<author><name>LINWEI YU</name>
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</author>
<author><name sortKey="Kim, Ka Hyun" uniqKey="Kim K">Ka-Hyun Kim</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique</s1>
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</author>
<author><name sortKey="Ngo, Irene" uniqKey="Ngo I">Irène Ngo</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Laboratoire de Génie Électrique de Paris, CNRS UMR 8507, SUPELEC, Plateau de Moulon</s1>
<s2>91192 Gif sur Yvette</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
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<settlement type="city">Gif sur Yvette</settlement>
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</author>
<author><name sortKey="Roca I Cabarrocas, Pere" uniqKey="Roca I Cabarrocas P">Pere Roca I Cabarrocas</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
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<placeName><region type="region" nuts="2">Île-de-France</region>
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</titleStmt>
<publicationStmt><idno type="inist">13-0044801</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0044801 INIST</idno>
<idno type="RBID">Pascal:13-0044801</idno>
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<idno type="wicri:Area/Main/Repository">000535</idno>
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<seriesStmt><idno type="ISSN">1062-7995</idno>
<title level="j" type="abbreviated">Prog. photovolt.</title>
<title level="j" type="main">Progress in photovoltaics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coatings</term>
<term>Crystalline material</term>
<term>Glass</term>
<term>ITO layers</term>
<term>Indium oxide</term>
<term>Nanowires</term>
<term>Open circuit voltage</term>
<term>Optical trapping</term>
<term>Performance evaluation</term>
<term>Short circuit currents</term>
<term>Silicon</term>
<term>Silicon solar cells</term>
<term>Solar cell</term>
<term>Texture</term>
<term>Tin addition</term>
<term>VLS growth</term>
<term>Zinc oxide</term>
<term>n type semiconductor</term>
<term>p type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire silicium</term>
<term>Evaluation performance</term>
<term>Texture</term>
<term>Semiconducteur type p</term>
<term>Méthode VLS</term>
<term>Couche ITO</term>
<term>Addition étain</term>
<term>Tension circuit ouvert</term>
<term>Courant court circuit</term>
<term>Cellule solaire</term>
<term>Piégeage optique</term>
<term>Nanofil</term>
<term>Verre</term>
<term>Matériau cristallin</term>
<term>Oxyde de zinc</term>
<term>Revêtement</term>
<term>Semiconducteur type n</term>
<term>Oxyde d'indium</term>
<term>Silicium</term>
<term>a-Si:H</term>
<term>ZnO</term>
<term>ITO</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term>
</keywords>
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<front><div type="abstract" xml:lang="en">We present a single pump-down process to texture hydrogenated amorphous silicon solar cells. Mats of p-type crystalline silicon nanowires were grown to lengths of 1 μm on glass covered with flat ZnO using a plasma-assisted Sn-catalyzed vapor-liquid-solid process. The nanowires were covered with conformal layers of intrinsic and n-type hydrogenated amorphous silicon and a sputtered layer of indium tin oxide. Each cell connects in excess of 10<sup>7</sup>
 radial junctions over areas of 0.126 cm<sup>2</sup>
. Devices reach open-circuit voltages of 0.8 V and short-circuit current densities of 12.4 mA cm<sup>-2</sup>
, matching those of hydrogenated amorphous silicon cells deposited on textured substrates.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0>
</fA01>
<fA03 i2="1"><s0>Prog. photovolt.</s0>
</fA03>
<fA05><s2>21</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CHO (Jinyoun)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>O'DONNELL (Benedict)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LINWEI YU</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KIM (Ka-Hyun)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>NGO (Irène)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>ROCA I CABARROCAS (Pere)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Total S.A., Gas & Power, R&D Division</s1>
<s2>Courbevoie</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="03"><s1>Laboratoire de Génie Électrique de Paris, CNRS UMR 8507, SUPELEC, Plateau de Moulon</s1>
<s2>91192 Gif sur Yvette</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
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<fA20><s1>77-81</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>26755</s2>
<s5>354000506315980080</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>25 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0044801</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CC</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Progress in photovoltaics</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We present a single pump-down process to texture hydrogenated amorphous silicon solar cells. Mats of p-type crystalline silicon nanowires were grown to lengths of 1 μm on glass covered with flat ZnO using a plasma-assisted Sn-catalyzed vapor-liquid-solid process. The nanowires were covered with conformal layers of intrinsic and n-type hydrogenated amorphous silicon and a sputtered layer of indium tin oxide. Each cell connects in excess of 10<sup>7</sup>
 radial junctions over areas of 0.126 cm<sup>2</sup>
. Devices reach open-circuit voltages of 0.8 V and short-circuit current densities of 12.4 mA cm<sup>-2</sup>
, matching those of hydrogenated amorphous silicon cells deposited on textured substrates.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Cellule solaire silicium</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Silicon solar cells</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Texture</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Texture</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Textura</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Semiconducteur type p</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>p type semiconductor</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Semiconductor tipo p</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Méthode VLS</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>VLS growth</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Método VLS</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Open circuit voltage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Courant court circuit</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Short circuit currents</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Piégeage optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Optical trapping</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Verre</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Glass</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Revêtement</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Coatings</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Revestimiento</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Semiconducteur type n</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>n type semiconductor</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Semiconductor tipo n</s0>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>28</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>28</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>28</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Silicio</s0>
<s2>NC</s2>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>a-Si:H</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>028</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass

Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass

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